RD30HVF1 transistor equivalent, silicon mosfet power transistor.
1
APPLICATION
For output stage of high power amplifiers in VHF band Mobile radio sets.
2.3+/-0.3
2.8+/-0.3 0.10
3.0+/-0.4
5.1+/-0.5
PIN 1.Drain 2.Source 3.Gate UNI.
Silicon MOSFET Power Transistor,175MHz,30W
OUTLINE
High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Effi.
RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
Silicon MOSFET Power Transistor,175MHz,30W
OUTLINE
High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ.
2 3
R1.6
1.
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